The CJ2310 S10 is a TrenchFET Power MOSFET transistor from Changjiang Electronics Technology (CJ), offering a robust solution for various electronic applications. With a maximum Drain-Source Voltage (Vdss) of 60V and a Continuous Drain Current of 3A, this N-channel MOSFET is capable of handling high power and current requirements with ease. Packaged in a compact 3-pin SOT-23 format, it features a power dissipation of 350mW, making it suitable for surface mount applications. Additionally, it is lead-free, ensuring environmental compliance. Ideal for use in Load Switch for portable devices and DC-DC converter applications, its high power and current-handling capability make it versatile for a range of battery switch and DC/DC converter applications.
CJ2310 S10 SOT23 N-CH MOSFET
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FEATURES & SPECIFICATIONS
- Continuous Drain Current: 3A
- Threshold Voltage: 2V at 250µA
- Drain-Source Voltage (Vdss): 60V
- Operating Temperature: Up to +150℃
- Power Dissipation: 350mW
- Breakdown Voltage of Grid and Source: ±20V
- Polarization: N-channel
- Storage Temperature: From -55 to +150℃
- Lead Quantity: 3 Pins
- Dimensions (L x W/Size): 3.00 x 1.40mm
- Rated Current: 3A
- Rdson (Maximum) for Different IDs and Vgs: 125mΩ
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